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Product Status
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Active
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Technology
|
MOSFET (Metal Oxide)
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|
Configuration
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2 N-Channel (Dual)
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FET Feature
|
Logic Level Gate
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Drain to Source Voltage (Vdss)
|
60V
|
|
Current - Continuous Drain (Id) @ 25°C
|
410mA
|
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Rds On (Max) @ Id, Vgs
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1.8Ohm @ 500mA, 10V
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Vgs(th) (Max) @ Id
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1.8V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs
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0.45nC @ 10V
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Input Capacitance (Ciss) (Max) @ Vds
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32pF @ 25V
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Power - Max
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580mW
|
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Operating Temperature
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-55°C ~ 150°C (TJ)
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Mounting Type
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Surface Mount
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Package / Case
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SOT-563, SOT-666
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Supplier Device Package
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SOT-563
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Email: sales@hk-innovo.com
(M-F 08.00 a.m. - 05:00 p.m.)
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