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| Quantity | 5-10 | 11-100 | 101-500 | 501-2000 |
| Discount | 2% OFF | 5% OFF | 10% OFF | 15% OFF |
| Price | US$ 2.97 | US$ 2.88 | US$ 2.73 | US$ 2.58 |
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Product Status
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Active
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Technology
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MOSFET (Metal Oxide)
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Configuration
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N and P-Channel
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FET Feature
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Logic Level Gate
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Drain to Source Voltage (Vdss)
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60V
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Current - Continuous Drain (Id) @ 25°C
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500mA, 360mA
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Rds On (Max) @ Id, Vgs
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1.7Ohm @ 500mA, 10V
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Vgs(th) (Max) @ Id
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2.5V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs
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0.3nC @ 4.5V
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Input Capacitance (Ciss) (Max) @ Vds
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30pF @ 25V
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Power - Max
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450mW
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Operating Temperature
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-55°C ~ 150°C (TJ)
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Mounting Type
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Surface Mount
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Package / Case
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SOT-563, SOT-666
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Supplier Device Package
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SOT-563
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Email: sales@hk-innovo.com
(M-F 08.00 a.m. - 05:00 p.m.)
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