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FET Type
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P-Channel
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Technology
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MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss)
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40 V
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Current - Continuous Drain (Id) @ 25°C
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8.5A (Ta)
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Drive Voltage (Max Rds On, Min Rds On)
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4.5V, 10V
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Rds On (Max) @ Id, Vgs
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11mOhm @ 9.8A, 10V
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Vgs(th) (Max) @ Id
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2.5V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs
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47.5 nC @ 5 V
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Vgs (Max)
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±25V
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Input Capacitance (Ciss) (Max) @ Vds
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4234 pF @ 20 V
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FET Feature
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-
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Power Dissipation (Max)
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1.3W (Ta)
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Operating Temperature
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-55°C ~ 150°C (TJ)
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Mounting Type
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Surface Mount
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Supplier Device Package
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PowerDI5060-8
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Package / Case
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8-PowerTDFN
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Email: sales@hk-innovo.com
(M-F 08.00 a.m. - 05:00 p.m.)
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