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Technology
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MOSFET (Metal Oxide)
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Configuration
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2 P-Channel (Dual)
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FET Feature
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Logic Level Gate
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Drain to Source Voltage (Vdss)
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20V
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Current - Continuous Drain (Id) @ 25°C
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2.3A
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Rds On (Max) @ Id, Vgs
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115mOhm @ 2.3A, 4.5V
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Vgs(th) (Max) @ Id
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1.5V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs
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7nC @ 4.5V
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Input Capacitance (Ciss) (Max) @ Vds
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467pF @ 10V
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Power - Max
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700mW
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Operating Temperature
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-55°C ~ 150°C (TJ)
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Mounting Type
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Surface Mount
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Package / Case
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SOT-23-6 Thin, TSOT-23-6
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Supplier Device Package
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SuperSOT™-6
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Email: sales@hk-innovo.com
(M-F 08.00 a.m. - 05:00 p.m.)
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