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| Quantity | 5-10 | 11-100 | 101-500 | 501-2000 |
| Discount | 2% OFF | 5% OFF | 10% OFF | 15% OFF |
| Price | US$ 1.10 | US$ 1.06 | US$ 1.01 | US$ 0.95 |
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Product Status
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Active
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FET Type
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P-Channel
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Technology
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MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss)
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200 V
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Current - Continuous Drain (Id) @ 25°C
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5.7A (Tc)
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Drive Voltage (Max Rds On, Min Rds On)
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10V
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Rds On (Max) @ Id, Vgs
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690mOhm @ 2.85A, 10V
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Vgs(th) (Max) @ Id
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5V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs
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25 nC @ 10 V
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Vgs (Max)
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±30V
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Input Capacitance (Ciss) (Max) @ Vds
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770 pF @ 25 V
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FET Feature
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-
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Power Dissipation (Max)
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2.5W (Ta), 55W (Tc)
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Operating Temperature
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-55°C ~ 150°C (TJ)
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Mounting Type
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Surface Mount
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Supplier Device Package
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TO-252AA
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Package / Case
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TO-252-3, DPak (2 Leads + Tab), SC-63
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Email: sales@hk-innovo.com
(M-F 08.00 a.m. - 05:00 p.m.)
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