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Product Status
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Active
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Technology
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MOSFET (Metal Oxide)
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|
Configuration
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N and P-Channel
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FET Feature
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-
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Drain to Source Voltage (Vdss)
|
30V
|
|
Current - Continuous Drain (Id) @ 25°C
|
-
|
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Rds On (Max) @ Id, Vgs
|
29mOhm @ 5.8A, 10V
|
|
Vgs(th) (Max) @ Id
|
1V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs
|
33nC @ 10V
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Input Capacitance (Ciss) (Max) @ Vds
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650pF @ 25V
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Power - Max
|
2W
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Operating Temperature
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-55°C ~ 150°C (TJ)
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|
Mounting Type
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Surface Mount
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Package / Case
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8-SOIC (0.154", 3.90mm Width)
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Supplier Device Package
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8-SO
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Email: sales@hk-innovo.com
(M-F 08.00 a.m. - 05:00 p.m.)
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