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| Quantity | 5-10 | 11-100 | 101-500 | 501-2000 |
| Discount | 2% OFF | 5% OFF | 10% OFF | 15% OFF |
| Price | US$ 1.88 | US$ 1.82 | US$ 1.73 | US$ 1.63 |
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Product Status
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Not For New Designs
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FET Type
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P-Channel
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Technology
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MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss)
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30 V
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Current - Continuous Drain (Id) @ 25°C
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22A (Ta), 160A (Tc)
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Drive Voltage (Max Rds On, Min Rds On)
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4.5V, 10V
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Rds On (Max) @ Id, Vgs
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2.9mOhm @ 22A, 10V
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Vgs(th) (Max) @ Id
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2.4V @ 150µA
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Gate Charge (Qg) (Max) @ Vgs
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130 nC @ 10 V
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Vgs (Max)
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±20V
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Input Capacitance (Ciss) (Max) @ Vds
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7305 pF @ 15 V
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FET Feature
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-
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Power Dissipation (Max)
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2.1W (Ta), 113W (Tc)
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Operating Temperature
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-40°C ~ 150°C (TJ)
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Mounting Type
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Surface Mount
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Supplier Device Package
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DIRECTFET™ MX
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Package / Case
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DirectFET™ Isometric MX
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Email: sales@hk-innovo.com
(M-F 08.00 a.m. - 05:00 p.m.)
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