|
Copy and share this link on social network or send it to your friends
Copy
|
FET Type
|
N-Channel
|
|
|
Technology
|
MOSFET (Metal Oxide)
|
|
|
Drain to Source Voltage (Vdss)
|
800 V
|
|
|
Current - Continuous Drain (Id) @ 25°C
|
9A (Tc)
|
|
|
Drive Voltage (Max Rds On, Min Rds On)
|
10V
|
|
|
Rds On (Max) @ Id, Vgs
|
900mOhm @ 4.5A, 10V
|
|
|
Vgs(th) (Max) @ Id
|
4.5V @ 100µA
|
|
|
Gate Charge (Qg) (Max) @ Vgs
|
72 nC @ 10 V
|
|
|
Vgs (Max)
|
±30V
|
|
|
Input Capacitance (Ciss) (Max) @ Vds
|
2180 pF @ 25 V
|
|
|
FET Feature
|
-
|
|
|
Power Dissipation (Max)
|
40W (Tc)
|
|
|
Operating Temperature
|
-55°C ~ 150°C (TJ)
|
|
|
Mounting Type
|
Through Hole
|
|
|
Supplier Device Package
|
TO-220FP
|
|
|
Package / Case
|
TO-220-3 Full Pack
|
Email: sales@hk-innovo.com
(M-F 08.00 a.m. - 05:00 p.m.)
FOLLOW US
No related record found