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Technology
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MOSFET (Metal Oxide)
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Configuration
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2 P-Channel (Dual)
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FET Feature
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-
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Drain to Source Voltage (Vdss)
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40V
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Current - Continuous Drain (Id) @ 25°C
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4A
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Rds On (Max) @ Id, Vgs
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50mOhm @ 6A, 10V
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Vgs(th) (Max) @ Id
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3V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs
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13.9nC @ 10V
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Input Capacitance (Ciss) (Max) @ Vds
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674pF @ 20V
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Power - Max
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1.8W
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Operating Temperature
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-55°C ~ 150°C (TJ)
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Mounting Type
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Surface Mount
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Package / Case
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8-SOIC (0.154", 3.90mm Width)
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Email: sales@hk-innovo.com
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