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Product Status
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Active
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FET Type
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P-Channel
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Technology
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MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss)
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100 V
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Current - Continuous Drain (Id) @ 25°C
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1.1A (Tc)
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Drive Voltage (Max Rds On, Min Rds On)
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10V
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Rds On (Max) @ Id, Vgs
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1.2Ohm @ 660mA, 10V
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Vgs(th) (Max) @ Id
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4V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs
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8.7 nC @ 10 V
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Vgs (Max)
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±20V
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Input Capacitance (Ciss) (Max) @ Vds
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200 pF @ 25 V
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FET Feature
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-
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Power Dissipation (Max)
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2W (Ta), 3.1W (Tc)
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Operating Temperature
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-55°C ~ 150°C (TJ)
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Mounting Type
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Surface Mount
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Supplier Device Package
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SOT-223
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Package / Case
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TO-261-4, TO-261AA
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Email: sales@hk-innovo.com
(M-F 08.00 a.m. - 05:00 p.m.)
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